![]() ![]() ![]() Some Part number from the same manufacture MULTICOMPĢN3906 Specifications: Transistor Polarity: PNP Collector Emitter Voltage V(br)ceo: 40V Transition Frequency Typ ft: 250MHz DC Collector Current: 200mA Power Dissipation Pd: 625mW DC Current Gain hFE:ĢN4032 Specifications: Transistor Polarity: PNP Collector Emitter Voltage V(br)ceo: -60V Transition Frequency Typ ft: - DC Collector Current: 1A Power Dissipation Pd: 800mW DC Current Gain hFE: 40 OperatingĢN4238 Specifications: Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 60V Transition Frequency Typ ft: - DC Collector Current: 3A Power Dissipation Pd: 1W DC Current Gain hFE: 30 OperatingĢN4401 Specifications: Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 40V Transition Frequency Typ ft: 250MHz DC Collector Current: 600mA Power Dissipation Pd: 625mW DC Current Gain hFE:ĢN4920 Specifications: Transistor Polarity: PNP Collector Emitter Voltage V(br)ceo: -80V Transition Frequency Typ ft: 3MHz DC Collector Current: 1A Power Dissipation Pd: 30W DC Current Gain hFE: 40 OperatingĢN5038 Specifications: Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 90V Transition Frequency Typ ft: - DC Collector Current: 20A Power Dissipation Pd: 140W DC Current Gain hFE: 20 OperatingĢN5179-NRC Specifications: Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 12V Transition Frequency Typ ft: 900MHz DC Collector Current: 50mA Power Dissipation Pd: 20mW DC Current Gain hFE:ĢN5191 Specifications: Transistor Polarity: - Collector Emitter Voltage V(br)ceo: - Transition Frequency Typ ft: - DC Collector Current: - Power Dissipation Pd: - DC Current Gain hFE: - OperatingĢN5193 Specifications: Transistor Polarity: PNP Collector Emitter Voltage V(br)ceo: -40V Transition Frequency Typ ft: 2MHz DC Collector Current: 1A Power Dissipation Pd: 40W DC Current Gain hFE: 100 OperatingĢN5195 Specifications: Transistor Polarity: - Collector Emitter Voltage V(br)ceo: - Transition Frequency Typ ft: - DC Collector Current: - Power Dissipation Pd: - DC Current Gain hFE: - OperatingĢN5301 Specifications: Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 40V Transition Frequency Typ ft: 2MHz DC Collector Current: 30A Power Dissipation Pd: 200W DC Current Gain hFE: 40 OperatingĢN5303 Specifications: Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 80V Transition Frequency Typ ft: 2MHz DC Collector Current: 20A Power Dissipation Pd: 200W DC Current Gain hFE: 40 OperatingĢN5320 Specifications: Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 75V Transition Frequency Typ ft: - DC Collector Current: 2A Power Dissipation Pd: 10W DC Current Gain hFE: 30 OperatingĢN5322 Specifications: Transistor Polarity: PNP Collector Emitter Voltage V(br)ceo: 75V Transition Frequency Typ ft: - DC Collector Current: 2A Power Dissipation Pd: 10W DC Current Gain hFE: 30 Operating VCEO Maximum (V) 40 IC Maximum (A) 0.2 VCE (sat) Maximum (V) 10mA 0.2 toff Maximum (ns) 10mA 250 hFE Minimum 10mA 100 Ptot at 25☌ (mW) 500 Package and Pin Out TO-92 Part Number ![]() ![]() General purpose switching and amplifier applications.ĭescription Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation = 25☌ Derate above 25☌ Power Dissipation at Tc= 25☌ Derate above 25☌ Operating and Storage JunctionTemperature Range Thermal Resistance Junction to Case Junction to Ambient Rth (j-c) Rth (j-a) 83.3 ☌/W 200 Symbol VCEO VCBO VEBO IC Value mA mW mW/☌ W mW/☌ ☌ V Unitĭescription Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Cut off Current Base Current Symbol *VCEO VCBO VEBO ICEX IBL Test Condition = 0 VCE = 30V, VEB = 0.1mA, VCE = 1mA, VCE = 10mA, VCE = 50mA, VCE = 100mA, VCE nA V UnitĬollector Emitter Saturation Voltage Base Emitter Saturation Voltageĭescription Small Signal Characteristic Transistors Frequency Output Capacitance Input Capacitance Small Signal Current Gain Input Impedance Output Admittance Voltage Feedback Ratio Noise Figure Switching Time Delay Time Rise Time Storage Time Fall Time ts tf VCC = 3V, VBE = 1mA VCC <50 fT Cob Cib hfe hie hoe hre = 100♚, VCE = 1mA, VCE = 10mA, VCE = 100MHz VCB = 1MHz VBE = 1MHz All f = kHz pF k umhos 10-4 dB MHz Symbol Test Condition 2N3904 Units Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. NPN silicon planar switching transistors. ![]()
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |